• DocumentCode
    1328138
  • Title

    Application of Post- \\hbox {HfO}_{2} Fluorine Plasma Treatment for Improvement of \\hbox {In}_{0.53}\\hbox</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Chen, Yen-Ting ; Wang, Yanzhen ; Xue, Fei ; Zhou, Fei ; Lee, Jack C.</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>32</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>11</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2011</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1531</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1533</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Notable improvements in the HfO<sub>2</sub>/In<sub>0.53</sub> Ga<sub>0.47</sub>As gate stack have been achieved by a post- HfO<sub>2</sub> fluorine plasma treatment, including excellent interface quality of low-equivalent-oxide-thickness HfO<sub>2</sub> (1.4 nm) directly on In<sub>0.53</sub>Ga<sub>0.47</sub>As with no interface passivation layer, over five-times reduction in interface trap density from 2.8 × 10<sup>12</sup> to 4.9 × 10<sup>11</sup> cm<sup>-2</sup>·eV<sup>-1</sup>, improved subthreshold swing from 127 to 109 mV/dec, and reduced <i>Id</i>-<i>Vg</i> hysteresis in pulsed <i>Id</i>-<i>Vg</i> measurement. Consequently, improved electrical performances have been achieved in 29% higher effective channel mobility and 29% higher drive current.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; MOSFET; gallium arsenide; hafnium compounds; indium compounds; passivation; plasma materials processing; HfO<sub>2</sub>; HfO<sub>2</sub>-In<sub>0.53</sub>Ga<sub>0.47</sub>As; MOSFET; channel mobility; drive current; fluorine plasma treatment; interface passivation layer; interface trap density; low-equivalent- oxide-thickness interface quality; size 1.4 nm; subthreshold swing; Charge carrier processes; Hafnium compounds; Indium gallium arsenide; Logic gates; Passivation; Performance evaluation; Plasmas; <formula formulatype=$hbox{HfO}_{2}$ ; Fluorine plasma treatment; InGaAs;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2165332
  • Filename
    6026897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1328138