Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics

Author

Tsui, Bing-Yue ; Li, Po-Hsueh ; Yen, Chih-Chan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

32

Issue

11

fYear

2011

Firstpage

1594

Lastpage

1596

Abstract

Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high- k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al₂O₃ are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO₂. The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.

Keywords

MIS capacitors; aluminium compounds; hafnium compounds; hole traps; interface states; permittivity; radiation hardening (electronics); silicon compounds; ultraviolet lithography; Al₂O₃; EUV irradiation; HfAlO; HfSiO; SiO; border trap; dielectric thickness; extreme ultraviolet irradiation; high-dielectric-constant dielectric; high-k dielectric; high-k-metal gate MIS capacitor; high-quality interfacial layer; hole trap; interface trap; oxide trap; radiation-hard device; Aluminum oxide; Dielectrics; High K dielectric materials; Logic gates; MOCVD; Radiation effects; Ultraviolet sources; Border traps; extreme ultraviolet (EUV); high-dielectric-constant dielectrics; hole traps; interface states;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2165521

Filename

6026902