Bias and temperature dependence of homogeneous hot-electron injection from silicon into silicon dioxide at low voltages

In this paper, new homogeneous hot-electron injection data at 300 K and 77 K is provided covering applied voltages from well below to well above the Si-SiO₂ barrier height, and a wide range of oxide fields. We found that, in contrast to the MOSFET case, homogeneous injection shows two different regimes for accelerating voltages below and above the barrier height. A simple interpretation of the data is proposed, and supported by Monte Carlo (MC) simulations of the injection experiment. Essentially, the two regimes are the signature of a marked transition between an electron population mostly heated by the electric field, and a tail population created by additional but less efficient energy gain mechanisms, leading to a sharp transition in the carrier distribution function. The details of the bias and temperature dependence of injection are then interpreted as the combined effect of tunneling and carrier distribution. Furthermore, possible implications on MOSFET gate currents are briefly discussed