Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices

Author

Jiang, Dandan ; Zhang, Manhong ; Huo, Zongliang ; Sun, Zhong ; Wang, Yong ; Zhang, Bo ; Chen, Junning ; Liu, Ming

Author_Institution

Inst. of Microelectron., Beijing, China

Volume

33

Issue

12

fYear

2012

Firstpage

1705

Lastpage

1707

Abstract

The peaklike behavior of interface trap generation was observed in silicon-nanocrystal (Si-NC) memory during Fowler-Nordheim program/erase cycling. In addition to the two peaks at 0.3 and 0.85 eV from Pb₀ centers, two extra peaks (0.45 and 0.7 eV) were also observed and suggested from Pb₁ centers. In contrast, only Pb₀ centers were observed in reference devices without Si-NCs. The result will be helpful to understand the effect of Si-NCs on the interface reliability.

Keywords

elemental semiconductors; flash memories; interface states; lead; nanostructured materials; reliability; semiconductor storage; silicon; Fowler-Nordheim program; Si:Pb; cycling-induced peak-like interface state generation; erase cycling; interface reliability; interface trap generation; nanocrystal memory devices; Degradation; Hot carriers; Interface states; Nanocrystals; Semiconductor device measurement; Silicon; Endurance; Pb center; interface degradation; silicon-nanocrystal (Si-NC) memory;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2218567

Filename

6341042