Power and stability limitations of resonant tunneling diodes

Author

Kidner, C. ; Mehdi, I. ; East, J.R. ; Haddad, G.I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

38

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

864

Lastpage

872

Abstract

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices

Keywords

semiconductor diodes; solid-state microwave devices; stability; tunnelling; GaAs-AlAs-InGaAs-AlAs-GaAs; device conditions; double-barrier diode; extrinsic circuit; high-frequency power generation; low-frequency oscillation; parallel capacitance; resonant tunneling diodes; series inductance; stability limitations; Capacitance; Circuit stability; Diodes; Gallium arsenide; Indium gallium arsenide; Inductance; Power generation; RLC circuits; Resonant tunneling devices; Stability criteria;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.55778

Filename

55778