Title :
Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step
Author :
Oruc, F.B. ; Cimen, F. ; Rizk, Amr ; Ghaffari, Mohsen ; Nayfeh, Ammar ; Okyay, A.K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V·s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the Idrain- Vgate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.
Keywords :
atomic layer deposition; flash memories; thin film transistors; zinc compounds; ZnO; atomic layer deposition; channel material; charge-trapping layer; charge-trapping physics; memory effect; mobility slope; physics-based TCAD simulations; single ALD step; subthreshold slope; thin-film device; thin-film-based single-transistor memory cell; voltage 2.35 V; Aluminum oxide; Atomic layer deposition; Charge carrier processes; Flash memory; Hysteresis; Thin film transistors; Zinc oxide; Atomic layer deposition (ALD); Flash memory; ZnO; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2219493
