Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

Author

Oruc, F.B. ; Cimen, F. ; Rizk, Amr ; Ghaffari, Mohsen ; Nayfeh, Ammar ; Okyay, A.K.

Author_Institution

Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey

Volume

33

Issue

12

fYear

2012

Firstpage

1714

Lastpage

1716

Abstract

A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm²/V·s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the I_drain- V_gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.

Keywords

atomic layer deposition; flash memories; thin film transistors; zinc compounds; ZnO; atomic layer deposition; channel material; charge-trapping layer; charge-trapping physics; memory effect; mobility slope; physics-based TCAD simulations; single ALD step; subthreshold slope; thin-film device; thin-film-based single-transistor memory cell; voltage 2.35 V; Aluminum oxide; Atomic layer deposition; Charge carrier processes; Flash memory; Hysteresis; Thin film transistors; Zinc oxide; Atomic layer deposition (ALD); Flash memory; ZnO; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2219493

Filename

6341043