Title :
An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS
Author :
Batur, O.Z. ; Akdag, E. ; Akkurt, H.K. ; Oncu, Ahmet ; Koca, Mutlu ; Dundar, Gunhan
Author_Institution :
Dept. of Electr. & Electron. Eng., Bogazici Univ., Istanbul, Turkey
Abstract :
In this brief, a 0-960-MHz/3.1-5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 mm2. At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 μW, respectively. The lower and the upper band “off-time” power consumptions of the transmitter are 0.36 and 1.7 μW, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.
Keywords :
CMOS integrated circuits; UHF integrated circuits; field effect MMIC; low-power electronics; radio transmitters; ultra wideband technology; CMOS process; dc-to-radio-frequency conversion; dual-band ultra low-power impulse-radio ultrawideband transmitter; efficiency 11.1 percent; efficiency 4.8 percent; frequency 0 MHz to 960 MHz; frequency 3.1 GHz to 5 GHz; power 0.36 muW; power 1.7 muW; power 31 muW; power 5.6 muW; pulse repetition frequency; pulse transmitter integrated circuit; size 130 nm; ultra low-power dual-band IR-UWB transmitter; upper band off-time power consumptions; Band pass filters; CMOS integrated circuits; Dual band; Pulse generation; Radio transmitters; Semiconductor device measurement; CMOS; digital; dual band; impulse radio; low power; pulse generator; radio-frequency (RF) integrated circuit; transmitter; ultrawideband (UWB);
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2012.2218474
