DocumentCode :
1328352
Title :
A Model for MOS Diodes With 
Cancellation in RFID Rectifiers
Author :
Raben, Hans ; Borg, Johan ; Johansson, Jesper
Author_Institution :
Dept. of Comput. Sci., Electr. & Space Eng., Lulea Univ. of Technol., Lulea, Sweden
Volume :
59
Issue :
11
fYear :
2012
Firstpage :
761
Lastpage :
765
Abstract :
A theoretical model for diode-connected MOS transistors with a threshold cancellation technique is developed. The model is based on a detailed analysis of the technique with internal threshold cancellation (ITC) and reveals design insight and performance limitations. Derived design equations illustrate the tradeoff between the voltage drop and the reverse leakage of the diode. Furthermore, a design procedure for the optimization of the power conversion efficiency (PCE) of a bridge rectifier with ITC MOS diodes was developed based on the model. A rectifier was designed and implemented in an austriamicrosystems 0.35-μm CMOS process, and Cadence simulation results of the PCE and the voltage conversion efficiency show good agreement with the model.
Keywords :
CMOS analogue integrated circuits; MOSFET; radiofrequency identification; rectifiers; semiconductor diodes; Cadence simulation; ITC MOS diodes; PCE optimization; RFID rectifiers; austriamicrosystems CMOS process; bridge rectifier; design procedure; detailed analysis; diode reverse leakage; diode-connected MOS transistors; internal threshold cancellation; power conversion efficiency; size 0.35 mum; theoretical model; threshold cancellation technique; voltage conversion efficiency; voltage drop; Bridge circuits; CMOS integrated circuits; Integrated circuit modeling; MOSFETs; Mathematical model; Radiofrequency identification; Semiconductor device modeling; Analog integrated circuits; CMOS; low power; low voltage; power conversion efficiency (PCE); radio-frequency identification (RFID); rectifier; reverse leakage; threshold cancellation; weak inversion;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2012.2220691
Filename :
6341060
Link To Document :
