Title :
Broadband
-Boosted Differential HBT Doublers With Transformer Balun
Author :
Zhang, Jian ; Bao, Mingquan ; Kuylenstierna, Dan ; Lai, Szhau ; Zirath, Herbert
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Broadband monolithic InGaP HBT frequency doublers for K-band application have been developed. The designs employ a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. To the authors´ best knowledge, these are the first frequency doublers utilizing the Gm-boosted configuration and the result demonstrate larger bandwidth and higher output power than any previously reported frequency doublers. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3-dB bandwidth, extending from 6 to 18 GHz. The transformer-coupled design has about 15-dB fundamental rejection over a slightly narrower bandwidth extending from 7 to 16 GHz. Both doublers have conversion gain peaking at more than -0.8 dB and output powerPsat >; 13 dBm . The designs are also very compact with chip sizes less than 0.5 mm2.
Keywords :
III-V semiconductors; baluns; capacitors; frequency multipliers; gallium compounds; heterojunction bipolar transistors; indium compounds; InGaP; K-band application; bandwidth 6 GHz to 18 GHz; bandwidth 7 GHz to 16 GHz; broadband Gm-boosted differential HBT doubler; broadband monolithic InGaP HBT frequency doubler; capacitive-based coupling; cross-coupled capacitor; differential common-base configuration; transformer balun; transformer-based coupling; Bandwidth; Couplings; Gain; Harmonic analysis; Heterojunction bipolar transistors; Impedance matching; Capacitor-crossed coupling; InGaP HBT; frequency doubler; transformer balun; transformer coupling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2011.2166121