Broad-band determination of the FET small-signal equivalent circuit

Author

Berroth, Manfred ; Bosch, Roland

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, West Germany

Volume

38

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

891

Lastpage

895

Abstract

A method to determine the broadband small-signal equivalent circuit of field-effect transistors (FETs) is proposed. This method is based on an analytic solution of the equations for the Y parameters of the intrinsic device and allows direct determination of the circuit elements at any specific frequency or averaged over a frequency range. The validity of the equivalent circuit can be verified by showing the frequency independence of each element. The method can be used for the whole range of measurement frequencies and can be applied to devices exhibiting severe low-frequency effects

Keywords

equivalent circuits; field effect transistors; FET; Y parameters; circuit elements; frequency independence; frequency range; intrinsic device; low-frequency effects; small-signal equivalent circuit; specific frequency; Analog integrated circuits; Digital integrated circuits; Equations; Equivalent circuits; FETs; Frequency measurement; Integrated circuit measurements; Integrated circuit modeling; Scattering parameters; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.55781

Filename

55781