DocumentCode :
1328556
Title :
Confinement of Microplasmas in Silicon Channels With Widths as Small as < \\hbox {5} \\mu\\hbox {m}
Author :
Kim, T.L. ; Kim, E.S. ; Park, S.-J. ; Eden, J.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Volume :
39
Issue :
11
fYear :
2011
Firstpage :
2696
Lastpage :
2697
Abstract :
Rare gas microplasmas confined in one dimension to <; 5 μm have been realized. Microchannels having cross sections in the form of a V-groove were fabricated in Si and microplasmas produced within the channels by means of a dielectric barrier structure in which electrodes are flush with the microgroove rim along the entire length of the channel. Stable uniform glows are generated in channels ~5 and 50 μm in width when a He/Ar or He/Ne gas mixture at a total pressure >; 400 torr is introduced to the channel. The requirement for Penning gas mixtures in the narrowest channel appears to be associated with an accelerated electron loss rate.
Keywords :
Penning discharges; electrodes; elemental semiconductors; gas mixtures; glow discharges; helium; microchannel flow; microfabrication; neon; plasma confinement; plasma production; silicon; He-Ne; Penning gas mixtures; Si; V-groove; accelerated electron loss rate; dielectric barrier structure; electrodes; microgroove rim; microplasma confinement; rare gas microplasmas; silicon channels; Argon; Cavity resonators; Helium; Microcavities; Microchannel; Plasmas; Silicon; Atmospheric-pressure Plasmas; microplasma;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2011.2165562
Filename :
6026962
Link To Document :
بازگشت