Title :
Physically-based RF model for metal-oxide-metal capacitors
Author :
Geng, Chunqi ; Chew, Kok Wai ; Yeo, Kiat Seng ; Do, Manh Anh ; Ma, Jianguo ; Chua, Chee Tee ; Shao, Kai
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
3/2/2000 12:00:00 AM
Abstract :
A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model
Keywords :
MIM devices; MMIC; UHF integrated circuits; capacitors; integrated circuit modelling; mixed analogue-digital integrated circuits; 1 to 10 GHz; MOM; RF applications; metal-oxide-metal capacitors; mixed-signal ICs; parasitics; physical properties; physical topology; physically-based RF model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000393
