• DocumentCode
    1328652
  • Title

    Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800°C

  • Author

    Hughes, P.J. ; Knights, A.P. ; Weiss, B.L. ; Ojha, S.

  • Author_Institution
    Sch. of Electron. Eng., Surrey Univ., Guildford, UK
  • Volume
    36
  • Issue
    5
  • fYear
    2000
  • fDate
    3/2/2000 12:00:00 AM
  • Firstpage
    427
  • Lastpage
    428
  • Abstract
    An experimental study of the absorption, refractive index and UV photosensitivity of proton implanted Ge-doped planar glass waveguides has shown that the defects induced by implantation at 800°C were photobleached after UV exposure and that self annealing occurred
  • Keywords
    annealing; germanium; ion implantation; noncrystalline defects; optical glass; optical planar waveguides; optical saturable absorption; refractive index; silicon compounds; ultraviolet spectra; 800 C; SiO2:Ge; SiO2:Ge,H; SiO2:Ge,H+; UV exposure; UV photosensitivity; absorption; defects; implantation; optical characteristics; photobleaching; photosensitive Ge-doped SiO2 planar waveguides; proton implanted Ge-doped planar glass waveguides; refractive index; self annealing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000367
  • Filename
    840079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1328652