Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon- Nanotube Multilayers

Author

Gasparyan, Ferdinand V. ; Poghossian, Arshak ; Vitusevich, Svetlana A. ; Petrychuk, Mykhaylo V. ; Sydoruk, Viktor A. ; Siqueira, José R., Jr. ; Oliveira, Osvaldo N., Jr. ; Offenhäusser, Andreas ; Schöning, Michael J.

Author_Institution

Yerevan State Univ., Yerevan, Armenia

Volume

11

Issue

1

fYear

2011

Firstpage

142

Lastpage

149

Abstract

Low-frequency noise in an electrolyte-insulator-semiconductor (EIS) structure functionalized with multilayers of polyamidoamine (PAMAM) dendrimer and single-walled carbon nanotubes (SWNT) is studied. The noise spectral density exhibits dependence with the power factor of and for the bare and functionalized EIS sensor, respectively. The gate-voltage noise spectral density is practically independent of the pH value of the solution and increases with increasing gate voltage or gate-leakage current. It has been revealed that functionalization of an EIS structure with a PAMAM/SWNTs multilayer leads to an essential reduction of the noise. To interpret the noise behavior in bare and functionalized EIS devices, a gate-current noise model for capacitive EIS structures based on an equivalent flatband-voltage fluctuation concept has been developed.

Keywords

carbon nanotubes; chemical sensors; field effect devices; EIS sensor; electrolyte insulator semiconductor structure; field effect device; flatband voltage fluctuation; gate leakage current; low frequency noise; polyamidoamine dendrimer; single walled carbon nanotube; Capacitance; Fluctuations; Insulators; Logic gates; Low-frequency noise; Nonhomogeneous media; Carbon nanotube; dendrimer; field-effect sensor; low-frequency noise;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2010.2052355

Filename

5579970