Title :
Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
Author :
Mereuta, A. ; Bouchoule, S. ; Alexandre, F. ; Sagnes, I. ; Decobert, J. ; Ougazzaden, A.
Author_Institution :
OPTO+, Groupement d´´Interet Econ., Marcoussis, France
fDate :
3/2/2000 12:00:00 AM
Abstract :
A performance comparison of InGaAs/GaAs and InGaNAs/GaAs strained quantum well (QW) laser structures grown by MOVPE is presented. Infinite threshold current densities of 0.095 and 1.22 kA/cm2, with slope efficiencies of 0.25 and 0.15 W/A at emission wavelengths of 1.18 and 1.22 μm, were obtained, respectively. A characteristic temperature (T0) of 80 K was determined for as-cleaved InGaAs QW lasers, while a T0 value as high as 117 K was obtained for InGaNAs QW lasers in the 20-80°C temperature range
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.18 mum; 1.22 mum; 117 K; 20 to 80 C; 80 K; InGaAs-GaAs; InGaAs/GaAs; InGaNAs-GaAs; InGaNAs/GaAs; MOVPE; as-cleaved quantum well lasers; characteristic temperature; emission wavelengths; infinite threshold current densities; performance comparison; quantum well laser diodes; slope efficiencies; strained quantum well laser; strained quantum well laser structures; temperature range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000318
