Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE

Author

Mereuta, A. ; Bouchoule, S. ; Alexandre, F. ; Sagnes, I. ; Decobert, J. ; Ougazzaden, A.

Author_Institution

OPTO+, Groupement d´´Interet Econ., Marcoussis, France

Volume

36

Issue

5

fYear

2000

fDate

3/2/2000 12:00:00 AM

Firstpage

436

Lastpage

437

Abstract

A performance comparison of InGaAs/GaAs and InGaNAs/GaAs strained quantum well (QW) laser structures grown by MOVPE is presented. Infinite threshold current densities of 0.095 and 1.22 kA/cm², with slope efficiencies of 0.25 and 0.15 W/A at emission wavelengths of 1.18 and 1.22 μm, were obtained, respectively. A characteristic temperature (T₀) of 80 K was determined for as-cleaved InGaAs QW lasers, while a T₀ value as high as 117 K was obtained for InGaNAs QW lasers in the 20-80°C temperature range

Keywords

III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.18 mum; 1.22 mum; 117 K; 20 to 80 C; 80 K; InGaAs-GaAs; InGaAs/GaAs; InGaNAs-GaAs; InGaNAs/GaAs; MOVPE; as-cleaved quantum well lasers; characteristic temperature; emission wavelengths; infinite threshold current densities; performance comparison; quantum well laser diodes; slope efficiencies; strained quantum well laser; strained quantum well laser structures; temperature range;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000318

Filename

840085