Title :
Room-temperature operation of index-guided 1.55 μm InP-based vertical-cavity surface-emitting laser
Author :
Ortsiefer, M. ; Shau, R. ; Böhm, G. ; Köhler, F. ; Aman, M.C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Germany
fDate :
3/2/2000 12:00:00 AM
Abstract :
A novel concept for long-wavelength InP-based vertical cavity lasers (VCSELs) with a buried tunnel junction enables effective electrical and optical confinement and yields low series resistance. VCSELs with aperture diameters of 13 μm exhibit threshold currents of 10 mA, single-mode emission, a quantum efficiency of 10% and a threshold voltage of only 1.2 V
Keywords :
III-V semiconductors; indium compounds; laser beams; laser cavity resonators; laser modes; semiconductor lasers; surface emitting lasers; 1.2 V; 1.55 mum; 10 mA; 10 percent; 13 mum; 298 K; InP; InP-based vertical-cavity surface-emitting laser; VCSELs; aperture diameters; buried tunnel junction; electrical confinement; index-guided laser; long-wavelength InP-based vertical cavity lasers; low series resistance; optical confinement; quantum efficiency; room-temperature operation; single-mode emission; threshold currents; threshold voltage; vertical-cavity surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000397
