• DocumentCode
    1328757
  • Title

    A Passive W-Band Imaging Receiver in 65-nm Bulk CMOS

  • Author

    Tomkins, Alexander ; Garcia, Patrice ; Voinigescu, Sorin P.

  • Author_Institution
    Edward S. Rogers Sr. Dept. of ECE, Toronto, ON, Canada
  • Volume
    45
  • Issue
    10
  • fYear
    2010
  • Firstpage
    1981
  • Lastpage
    1991
  • Abstract
    A passive imaging receiver operating in the W-band around 90 GHz has been realized in a digital 65-nm CMOS process. The circuit, occupying only 0.41 mm2, integrates an SPDT switch with 4.2 dB loss and 25 dB isolation, a five-stage telescopic cascode LNA with 27 dB gain at 90 GHz, and a W-band square-law detector, all consuming less than 33 mA from 1.2 V. A version of the receiver without the input SPDT switch has a peak responsivity of over 200 kV/W and a minimum NEP of less than 0.1 pW/ Hz. The full Dicke radiometer, which includes the input switch, achieves a responsivity of 90 kV/W and an NEP of 0.2 pW/ Hz. This work represents the first W-band passive imaging receiver to be implemented in standard CMOS with this level of integration.
  • Keywords
    CMOS image sensors; millimetre wave imaging; millimetre wave receivers; radiometers; SPDT switch; W-band square-law detector; bulk CMOS; five-stage telescopic cascode LNA; frequency 90 GHz; full Dicke radiometer; gain 27 dB; loss 4.2 dB; millimeter-wave imager; passive W-band imaging receiver; peak responsivity; size 65 nm; voltage 1.2 V; Detectors; Gain; Imaging; Noise; Radiometry; Receivers; Switches; 65-nm CMOS; Dicke radiometer; W-band; millimeter-wave imager;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2010.2058150
  • Filename
    5579984