Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect

Author

Lee, Ya-Ju ; Lee, Chia-Jung ; Chen, Chih-Hao ; Lu, Tien-Chang ; Kuo, Hao-Chung

Author_Institution

Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

Volume

17

Issue

4

fYear

2011

Firstpage

985

Lastpage

989

Abstract

The current-voltage (I- V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2 × 10^-9A) is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 × 300 μm² (IO1 = 1 × 10^-25 A; IO2 = 1 × 10^-14 A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

Keywords

III-V semiconductors; gallium compounds; indium compounds; leakage currents; light emitting diodes; nanorods; scanning electron microscopy; tunnelling; wide band gap semiconductors; InGaN; InGaN nanorod light-emitting diode; current-voltage characteristics; defect-assisted leakage current; diffusion-recombination process; field-emission scanning electron microscope; injected carriers; nanoprobes; physical property; saturated current; tunneling effect; Current measurement; Gallium nitride; Junctions; Leakage current; Light emitting diodes; Nickel; Tunneling; Light-emitting diode (LED); nanorod; tunneling effect;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2010.2064287

Filename

5579987