Title :
III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications
Author :
Tomioka, Katsuhiro ; Tanaka, Tomotaka ; Hara, Shinjiro ; Hiruma, Kenji ; Fukui, Takashi
Author_Institution :
Japan Sci. & Technol. Agency, Tokyo, Japan
Abstract :
III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and optical devices on Si platforms. We present position-controlled and orientation-controlled growth of InAs, GaAs, and InGaAs NWs on Si by selective-area growth, and discuss how to control growth directions of III-V NW on Si. Basic studies on III-V/Si interface showing heteroepitaxial growth with misfit dislocations and coherent growth without misfit dislocations are presented. Finally, we demonstrate the integrations of a III-V NW-based vertical surrounding-gate field-effect transistor and light-emitting diodes array on Si. These demonstrations could have broad applications in high-electron-mobility transistors, laser diodes, and photodiodes with a functionality not enabled by conventional NW devices.
Keywords :
III-V semiconductors; dislocations; epitaxial growth; gallium arsenide; high electron mobility transistors; indium compounds; light emitting diodes; nanowires; photodiodes; semiconductor quantum wires; silicon; GaAs; III-V nanowires; InAs; InGaAs; Si; Si substrate; heteroepitaxial growth; high-electron-mobility transistors; laser diodes; light-emitting diodes array; misfit dislocations; nanoscale electrical; optical devices; orientation-controlled growth; photodiodes; position-controlled growth; selective-area growth; vertical surrounding-gate field-effect transistor; Cleaning; Doping; Epitaxial growth; Silicon; Substrates; Surface reconstruction; Surface treatment; Field-effect transistor (FET); III–V on Si; light-emitting diode (LED); metal–organic vapor phase epitaxy (MOVPE); nanowires (NWs); selective-area growth (SAG);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2010.2068280