DocumentCode :
1328861
Title :
Broadband lumped HBT amplifiers
Author :
Krishnan, S. ; Mensa, D. ; Guthrie, J. ; Jaganathan, S. ; Mathew, T. ; Girish, R. ; Wei, Y. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
36
Issue :
5
fYear :
2000
fDate :
3/2/2000 12:00:00 AM
Firstpage :
466
Lastpage :
467
Abstract :
The authors report the realisation of wideband amplifiers using AllnAs/GaInAs transferred-substrate heterojunction bipolar transistors (HBTs). The first amplifier is in the fτ doubler configuration with an input emitter follower while the second is a Darlington stage designed for high gain. The former had a low frequency gain of 8.2 dB and a 3 dB bandwidth of 80 GHz. While the latter had a low frequency gain of 18 dB and a bandwidth of 50 GHz
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave amplifiers; wideband amplifiers; 18 dB; 50 GHz; 8.2 dB; 80 GHz; AlInAs-GaInAs; Darlington stage; broadband lumped HBT amplifiers; input emitter follower; transferred-substrate heterojunction bipolar transistors; wideband amplifiers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000355
Filename :
840105
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1328861
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