Title :
The Ferroelectric and Magnetic Properties of Sol-Gel-Derived (Bi
Eu
FeO
Author :
Chen, H.Z. ; Kao, M.C. ; Young, S.L. ; Lin, C.C. ; Kung, C.Y. ; Chuang, B.N. ; Jiang, W.W. ; Song, J.S.
Author_Institution :
Dept. of Electron. Eng., Hsiuping Univ. of Sci. & Technol., Taichung, Taiwan
Abstract :
The Bi0.85 Eu0.15 FeO3 /Bi3.2 Y0.8 Ti3 O12 bilayer thin films were prepared on Pt(111)/Ti/SiO 2/Si(100) substrates using the sol-gel process and annealed by rapid thermal annealing in various annealing environments (ambient atmosphere and oxygen). The multiferroic/ferroelectric bilayer thin films were composed of 0.8-μ m thickness Bi0.85 Eu0.15 FeO3 and 0.2-μ m thickness of Bi3.2 Y0.8 Ti3 O12 thin film. The effects of annealing atmospheres (ambient atmosphere and oxygen) on the growth and properties of thin films were investigated. The results show that the intensities of the (117) diffraction peak of Bi3.2Y0.8Ti3O 12 film and (110) diffraction peak of Bi0.85Eu0.15FeO3 annealed in oxygen is stronger than those annealed in an ambient atmosphere. The Bi0.85Eu0.15FeO3/Bi3.2Y0.8Ti3O12 bilayer thin films annealed in the oxygen atmosphere exhibit the maximum remanent polarization (2mbi Pr) and remnant magnetization (2Mr) of 26 μ C/cm2 and 3.44 emu/g, respectively. The improved magnetic and ferroelectric properties can be attributed to the elimination of defects, such as oxygen vacancy and vacancy complexes.
Keywords :
annealing; bismuth compounds; europium compounds; ferroelectric materials; ferroelectric thin films; multiferroics; remanence; sol-gel processing; vacancies (crystal); yttrium compounds; (110) diffraction peak; (117) diffraction peak; Bi0.85Eu0.15FeO3-Bi3.2Y0.8Ti3O12; ferroelectric property; magnetic property; multiferroic-ferroelectric bilayer thin films; oxygen vacancy; rapid thermal annealing; remanent polarization; remnant magnetization; sol-gel process; vacancy complexes; Atmosphere; Atmospheric measurements; Bismuth; Leakage current; Magnetic hysteresis; Rapid thermal annealing; Ferroelectric; magnetic; multiferroic; remnant magnetization;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2011.2157094