Millimetre-wave frequency tripling using stacked heterostructure-barrier varactors on InP

Author

Krishnamurthi, K. ; Harrison, R.G.

Author_Institution

nortel labs., Ottawa, Ont., Canada

Volume

143

Issue

4

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

272

Lastpage

276

Abstract

Heterostructure-barrier varactors (HBVs) reported previously had limited power output. By using a pseudomorphic In_0.52Al_0.48As-AlAs-In_0.52Al_0.48As barrier with good current blocking characteristics and stacking three MBE-grown varactor layers, we achieve a symmetric stacked varactor on InP with low leakage and high breakdown voltage (~14 V). Tripler experiments at Ka band using these varactors give 20 dBm output with 7 dB conversion loss using a waveguide multiplier, and 10.8 dBm with 11 dB conversion loss using a microstrip circuit. These are the first HBVs to demonstrate reduced device capacitance per unit area and freedom from resistive tripling effects

Keywords

III-V semiconductors; aluminium compounds; frequency multipliers; indium compounds; microstrip circuits; millimetre wave frequency convertors; molecular beam epitaxial growth; varactors; waveguide components; 11 dB; 14 V; 7 dB; III V semiconductors; In_0.52Al_0.48As-AlAs-In_0.52Al _0.48As; InP; Ka band; MBE grown varactor layers; conversion loss; current blocking characteristics; heterostructure barrier varactors; high breakdown voltage; low leakage; microstrip circuit; millimetre-wave frequency tripling; power output; reduced device capacitance; stacked heterostructure-barrier varactors; symmetric stacked varactor; tripler experiments; waveguide multiplier;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings

Publisher

iet

ISSN

1350-2417

Type

jour

DOI

10.1049/ip-map:19960431

Filename

533186