A 29 dBm 70.7% PAE Injection-Locked CMOS Power Amplifier for PWM Digitized Polar Transmitter

Author

Paek, Ji-Seon ; Hong, Songcheol

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

20

Issue

11

fYear

2010

Firstpage

637

Lastpage

639

Abstract

This letter presents an injection-locked CMOS power amplifier for pulse width modulation (PWM) digitized polar transmitter. A power oscillator combined with injection-locking technique reduces the required driving power and provide high drain efficiency in the power stage. The switched power oscillator is proposed for PWM digitized polar transmitter. To achieve differential to single output and impedance transformation, a lumped element balun, employing a minimum number of discrete components, is used. The power amplifier achieved a power-added efficiency of 70.7% at a maximum output power of 29.05 dBm. The measured drain efficiency in the power stage was 72.7% at 820 MHz. The chip is implemented with a 0.18 μm CMOS process. The total chip size is 0.48 mm².

Keywords

CMOS integrated circuits; baluns; injection locked amplifiers; oscillators; power amplifiers; PWM digitized polar transmitter; injection locking technique; injection-locked CMOS power amplifier; lumped element balun; power added efficiency; switched power oscillator; CMOS integrated circuits; Injection-locked oscillators; Power generation; Power measurement; Pulse width modulation; Transistors; Voltage measurement; CMOS; drain efficiency (DE); injection-locked; power amplifier (PA); power-added efficiency (PAE); switched power oscillator (SPO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2071858

Filename

5580035