Title :
Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors
Author :
Sun, Hung-Chang ; Huang, Ching-Fang ; Chen, Yen-Ting ; Wu, Ting-Yun ; Liu, Chee Wee ; Hsu, Y.-J. ; Chen, J.-S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The conventional continuous scan and Delay-ID, lin methods of negative bias temperature instability characterization are not applicable for polycrystalline silicon thin-film transistors due to significant recovery effect and mobility degradation, respectively. An improved on-the-fly (OTF) method is proposed to simultaneously extract the threshold voltage shift and mobility degradation. In addition, the improved OTF method is more accurate than the continuous scan due to less recovery effect. The exponents of reaction-diffusion mechanism can be clearly determined using the new method.
Keywords :
elemental semiconductors; silicon; thin film transistors; NBTI degradation; Si; delay-ID; lin methods; mobility extraction; negative bias temperature instability; on-the-fly method; polycrystalline silicon thin-film transistors; reaction-diffusion mechanism; threshold voltage; Degradation; Negative bias temperature instability; Silicon; Thin film transistors; Threshold voltage; Negative bias temperature instability (NBTI); on-the-fly (OTF) measurement; polycrystalline silicon (poly-Si); thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2068550
