Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors

Author

Sun, Hung-Chang ; Huang, Ching-Fang ; Chen, Yen-Ting ; Wu, Ting-Yun ; Liu, Chee Wee ; Hsu, Y.-J. ; Chen, J.-S.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

57

Issue

11

fYear

2010

Firstpage

3186

Lastpage

3189

Abstract

The conventional continuous scan and Delay-ID, lin methods of negative bias temperature instability characterization are not applicable for polycrystalline silicon thin-film transistors due to significant recovery effect and mobility degradation, respectively. An improved on-the-fly (OTF) method is proposed to simultaneously extract the threshold voltage shift and mobility degradation. In addition, the improved OTF method is more accurate than the continuous scan due to less recovery effect. The exponents of reaction-diffusion mechanism can be clearly determined using the new method.

Keywords

elemental semiconductors; silicon; thin film transistors; NBTI degradation; Si; delay-ID; lin methods; mobility extraction; negative bias temperature instability; on-the-fly method; polycrystalline silicon thin-film transistors; reaction-diffusion mechanism; threshold voltage; Degradation; Negative bias temperature instability; Silicon; Thin film transistors; Threshold voltage; Negative bias temperature instability (NBTI); on-the-fly (OTF) measurement; polycrystalline silicon (poly-Si); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2068550

Filename

5580037