Title :
Reactive ion etching of InAlAs and InAlGaAs with BCl3/Cl 2/CH4/H2 mixtures for long-wavelength VCSELs
Author :
Shin, J.H. ; Yoo, B.S. ; Kwon, O.K.
Author_Institution :
Telecommun. Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
fDate :
3/16/2000 12:00:00 AM
Abstract :
A novel reactive ion etching process for the InAlGaAs material system lattice matched to InP using BCl3/Cl2/CH 4/H2 mixtures is presented. The etching speed is ~700 Å/min which remains approximately the same for all InAlGaAs compositions. The smoothness and the anisotropy of the etched wall appear to be very good. The etching characteristics of InP and mask materials are also reported
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; masks; semiconductor lasers; sputter etching; surface emitting lasers; InAlGaAs-InAlAs; anisotropy; etched wall; etching characteristics; etching speed; lattice matching; long-wavelength VCSELs; mask materials; reactive ion etching; smoothness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000400
