Title :
Numerical Simulations of Automatic Change of Threshold Voltage Shift in SRAM With Double-Floating-Gate Structures
Author :
Tanamoto, Tetsufumi ; Tatsumura, Kosuke ; Sakuma, Kiwamu ; Kinoshita, Atsuhiro ; Fujita, Shinobu ; Muraoka, Kouichi
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We theoretically investigate the self-adjustment mechanism of the threshold voltage shift of the static random access memory (SRAM) based on the double-floating-gate (DFG) structure by considering the capacitive coupling between the neighboring DFGs. We numerically show that the threshold voltage shift is enhanced by the interference between DFGs through the capacitive coupling. The static noise margin of DFG-SRAM is analytically estimated and expected to increase by more than 50% at 0.5-V operation.
Keywords :
circuit noise; numerical analysis; random-access storage; DFG-SRAM; automatic change; capacitive coupling; double-floating-gate structures; numerical simulation; self-adjustment mechanism; static noise margin; static random access memory; threshold voltage shift; Logic gates; Random access memory; Standards; Threshold voltage; Transistors; Tunneling; Analytical model; Floating gate (FG); static random access memory (SRAM); threshold shift;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2219312
