DocumentCode :
1329390
Title :
An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18 \\mu{\\rm m} SOI Technology
Author :
Cho, Moon-Kyu ; Baek, Dae-Hyun ; Kim, Jeong-Gil
Author_Institution :
Department of Electronic Engineering, Kwangwoon University, Seoul, Republic of Korea
Volume :
22
Issue :
12
fYear :
2012
Firstpage :
648
Lastpage :
650
Abstract :
This letter presents a 5 b phase shifter using a commercial 0.18 \\mu{\\rm m} SOI process for X-band phased array antenna. The phase coverage of 360 ^{\\circ} with the LSB of 11.25 ^{\\circ} is achieved at 8–12 GHz. The RMS phase error and amplitude variation are less than 6.5 ^{\\circ} and 0.5 dB, respectively. The measured insertion loss is less than 10.8 dB, and the input and output return losses are over 12 dB at 8–12 GHz. The current consumption is nearly zero with 1.8 V supply. The chip size is 1.14\\times 0.78 {\\rm mm}^{2} excluding pads. To the authors\´ knowledge, this is the first demonstration of X-band phase shifter using a commercial SOI technology.
Keywords :
Insertion loss; Loss measurement; Phase measurement; Phase shifters; Switches; Switching circuits; Transistors; DPDT switch; SOI; X-band; phase shifter; phased array antenna;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2226209
Filename :
6341860
Link To Document :
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