Title :
MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region
Author :
Jeong, Jaewook ; Hong, Yongtaek ; Jeong, Jae Kyeong ; Park, Jin-Seong ; Mo, Yeon-Gon
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source-drain (S/D) bulk region. The parasitic resistance and effective channel length characteristics exhibit similar behavior with that of crystalline silicon metal oxide-semiconductor field effect transistor (c-Si MOSFET) that has doped S/D bulk region. The transfer curves little changed with gate overlap variation, and the width-normalized parasitic resistance obtained from transmission line method was as low as 3 to 6 Omegamiddotcm. The effective channel length was shorter than the mask channel length and showed gate-to-source (VGS) voltage dependency that is frequently observed for lightly doped drain (LDD) MOSFET. Experimental and simulation results showed that the plasma exposure caused an LDD-like doping effect in the S/D bulk region by inducing oxygen vacancy in the a-IGZO layer.
Keywords :
MOSFET; gallium compounds; indium compounds; method of lines; plasma devices; thin film transistors; InGaZnO; MOSFET-like behavior; amorphous thin-film transistors; effective channel length; lightly doped drain MOSFET; mask channel length; oxygen vacancy; parasitic resistance; plasma exposure; plasma-exposed source-drain bulk region; transmission line method; Amorphous materials; Crystallization; Electric resistance; Electric variables; MOSFET circuits; Plasma properties; Plasma simulation; Plasma sources; Silicon; Thin film transistors; ATLAS simulation; TCAD simulation; a-IGZO; a-InGaZnO; parasitic resistance; plasma exposure; thin-film transistor (TFT);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2009.2021490
