Title :
A Novel Method for Extracting the Temperature-Dependent Crystal-Growth Parameters in Fast-Growth Phase-Change Memories
Author :
Goux, L. ; Hurkx, G.A.M. ; Wang, X.P. ; Delhougne, R. ; Attenborough, K. ; Gravesteijn, D. ; Wouters, D.J. ; Gonzalez, J. Perez
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this letter, we propose a novel method for the extraction of the crystal-growth parameters as a function of temperature in a reset-programmed phase-change memory cell having fast-growth chalcogenide material. The activation energy for the growth of crystal front is obtained using a physics-based analytical simulation fitting a single temperature-ramp measurement. The fit relies on all data points of the ramp measurement, allowing fast and precise determination of the activation energy related to the retention loss of the memory cell.
Keywords :
antimony compounds; chalcogenide glasses; crystal growth; phase change materials; phase change memories; semiconductor device models; semiconductor storage; SbTe:Jk; activation energy; fast-growth chalcogenide material; physics-based analytical simulation; reset-programmed phase-change memory cell; retention loss; single temperature-ramp measurement; temperature-dependent crystal-growth; Crystallization; Electrical resistance measurement; Phase change random access memory; Resistance; Temperature measurement; Crystal growth; fast-growth chalcogenide; phase change memory; retention;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2066953
