The Influence of Channel Compositions on the Electrical Properties of Solution-Processed Indium-Zinc Oxide Thin-Film Transistors

Author

Chen, Chang-Ken ; Hsieh, Hsing-Hung ; Shyue, Jing-Jong ; Wu, Chung-Chih

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

5

Issue

12

fYear

2009

Firstpage

509

Lastpage

514

Abstract

Electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated in this paper. Amorphous IZO thin films with high transparency and smooth/uniform surfaces are deposited by spin-coating. The In:Zn ratio is varied by adjusting the precursor compositions, and its influences on the electrical properties, such as resistivity, mobility, and threshold voltage, etc., of IZO films and TFTs are studied. The devices showed field effect mobility ranging from 0.07 to 2.13 cm²/Vmiddots with the In component (In/(In + Zn)) varying from 0.2 to 0.5.

Keywords

electric properties; spin coating; thin film transistors; amorphous IZO thin films; channel compositions; electrical properties; solution-processed indium-zinc oxide thin-film transistors; spin coating; Amorphous materials; Conductivity; Gold; Pulsed laser deposition; Semiconductor films; Sputtering; Substrates; Thin film transistors; Threshold voltage; Zinc; Channel compositions; indium-zinc oxide (IZO); oxide semiconductors; solution processing; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2009.2024437

Filename

5331944