DocumentCode :
1329489
Title :
Activation Volumes in Co _{2} FeSi Thin Films
Author :
Sagar, J. ; Fleet, L.R. ; Hirohata, Atsufumi ; O´Grady, K.
Author_Institution :
Dept. of Phys., Univ. of York, York, UK
Volume :
47
Issue :
10
fYear :
2011
Firstpage :
2440
Lastpage :
2443
Abstract :
Magnetic measurements and TEM analysis have been carried out in order to investigate the activation volume and its correlation with physical grain size within plasma sputtered Co2FeSi thin films. This has led to a new technique for estimating the volumes of ordered and disordered interfacial regions within granular Heusler alloy films. It has been shown that the activation volume has very little grain-size dependence, while the physical grain volume is seen to increase with bias voltage. This suggests that reversal within the films is a domain wall process, and the multistage reversal seen in those films with larger grain sizes is due to pinning of domain walls within the grains.
Keywords :
cobalt alloys; discontinuous metallic thin films; electron spin polarisation; ferromagnetic materials; grain size; iron alloys; magnetic domain walls; magnetic thin films; silicon alloys; sputtered coatings; transmission electron microscopy; Co2FeSi; TEM; activation volume; activation volumes; bias voltage; disordered interfacial regions; domain walls pinning; grain size; grain volume; granular Heusler alloy films; multistage reversal; ordered interfacial regions; plasma sputtered thin films; spin polarization; Annealing; Atmospheric measurements; Grain size; Magnetic tunneling; Metals; Silicon; Activation volumes; half-metal; magnetization reversal; spintronics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2011.2145367
Filename :
6027648
Link To Document :
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