Role of Interfacial Resonant States on Spin Injection in FM/GaAs Contacts

Author

Honda, Shogo ; Inoue, Junichi ; Itoh, Hayato

Author_Institution

ORDIST, Kansai Univ., Suita, Japan

Volume

47

Issue

10

fYear

2011

Firstpage

2753

Lastpage

2755

Abstract

Material dependence of the spin polarization P of the tunneling current in the spin injection process is calculated for ferromagnetic metal alloy/GaAs contacts with several values of Schottky barrier height. It is shown that calculated results of bias dependence of P are qualitatively the same as those in Fe/GaAs contacts, indicating weak dependence of P on materials. We have confirmed our previous result that the sign change in P with bias voltage is attributed to interfacial resonant states within the Schottky barrier in the GaAs layer.

Keywords

III-V semiconductors; Schottky barriers; chromium alloys; cobalt alloys; electrical contacts; ferromagnetic materials; gallium arsenide; interface structure; iron alloys; resonant states; semiconductor-metal boundaries; spin polarised transport; FM-GaAs contacts; FeCo-GaAs; FeCr-GaAs; Schottky barrier height; bias dependence; bias voltage; ferromagnetic metal alloy-GaAs contacts; interfacial resonant states; spin injection process; spin polarization; tunneling current; Frequency modulation; Gallium arsenide; Iron; Schottky barriers; Tunneling; Resonant tunneling; Schottky barrier; semiconductor–metal interface; spin injection;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2011.2158807

Filename

6027653