Effects of Magnetic Contacts on Magnetoresistance in FM/Graphene/FM Lateral Junctions

Author

Hiraiwa, Takumi ; Sato, Ryota ; Yamamura, A. ; Inoue, Junichi ; Honda, Shogo ; Itoh, Hayato

Author_Institution

Dept. of Appl. Phys., Nagoya Univ., Nagoya, Japan

Volume

47

Issue

10

fYear

2011

Firstpage

2743

Lastpage

2745

Abstract

We calculate the spin-dependent conductance in ferromagnetic metal (FM)/graphene(G)/FM lateral junctions using a numerical simulation and study the effects of roughness and electronic states at the FM/G contact on magnetoresistance (MR) in detail. It is shown that the MR ratio can be extremely high in fcc Ni alloy/G/fcc Ni alloy junctions because of a spin-dependent change in the electronic states at the contact. The MR ratio, however, is reduced by introducing roughness into junctions. Conditions for a high MR ratio in FM/G/FM junctions are discussed.

Keywords

MIM structures; electric admittance; ferromagnetic materials; graphene; interface roughness; interface states; magnetoresistance; nickel alloys; numerical analysis; electronic states; fcc Ni alloy-graphene-fcc Ni alloy junctions; ferromagnetic metal-graphene contact; ferromagnetic metal-graphene-ferromagnetic metal lateral junctions; magnetic contacts; magnetoresistance ratio; numerical simulation; roughness; spin-dependent change; spin-dependent conductance; Electrodes; Frequency modulation; Impurities; Junctions; Lattices; Nickel; FCC Ni contact; graphene heterojunction; magnetoresistance (MR);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2011.2158808

Filename

6027671