Title :
1000V wide input auxiliary power supply design with 1700V Silicon Carbide (SiC) MOSFET for three-phase applications
Author :
Liu, Jiangchuan ; Kin Lap Wong ; Mookken, John
Author_Institution :
Power Applic. Eng., Cree HongKong Ltd., Hong Kong, China
Abstract :
The paper proposes a single end Flyback design with Silicon Carbide (SiC) based 1700V MOSFET to replace conventional two-switch Flyback converter. An active start-up circuit with 1700V SiC MOSFET is implemented to optimize the converter design with wide input voltage from 200Vdc to 1000Vdc and lower power losses. A 60W auxiliary power supply is developed to demonstrate higher performance and less components counts to support wide input voltage range with this new 1700V SiC MOSFET device.
Keywords :
MOSFET; power convertors; silicon compounds; SiC; power 60 W; silicon carbide MOSFET; three-phase applications; voltage 1000 V; voltage 1700 V; wide input auxiliary power supply design; Heat sinks; MOSFET; Power supplies; Resistance; Resistors; Silicon; Silicon carbide;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803656
