Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications

Author

Zerarka, M. ; Austin, P. ; Toulon, G. ; Morancho, F. ; Arbess, H. ; Tasselli, J.

Author_Institution

LAAS-CNRS, Univ. of Toulouse, Toulouse, France

Volume

59

Issue

12

fYear

2012

Firstpage

3482

Lastpage

3488

Abstract

Two-dimensional numerical simulations have been performed to define the sensitive volume and triggering criteria of single-event burnouts (SEBs) for standard and superjunction MOSFETs and planar and trench IGBTs for different configurations of ionizing tracks and for different conditions of polarization and temperature. The analysis of the results gives a better understanding of the SEB mechanism in each structure and a comparison of behavior and robustness of these technologies under heavy-ion irradiation.

Keywords

insulated gate bipolar transistors; numerical analysis; polarisation; power MOSFET; SEB mechanism; heavy-ion irradiation; natural radiation environment application; planar IGBT; polarization; power device; sensitive volume; single-event burnout; superjunction MOSFET; trench IGBT; triggering criteria; two-dimensional numerical simulation; Insulated gate bipolar transistors; Junctions; MOSFETs; Semiconductor optical amplifiers; Substrates; MOSFET; TCAD simulations; planar IGBT; safe operating area (SOA); sensitive volume; single-event burnout (SEB); superjunction (SJ) MOSFET (SJ MOSFET); trench IGBT; triggering criteria;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2222889

Filename

6342905