• DocumentCode
    132989
  • Title

    Advantage of the use of an added driver source lead in discrete Power MOSFETs

  • Author

    Stella, C.G. ; Laudani, M. ; Gaito, A. ; Nania, M.

  • Author_Institution
    Power Transistor Div., STMicroelectron., Catania, Italy
  • fYear
    2014
  • fDate
    16-20 March 2014
  • Firstpage
    2574
  • Lastpage
    2581
  • Abstract
    Among all the semiconductor devices, the transistors are by far the most important ones; almost all of them are three pin devices (MOSFET, BJT, IGBT) and on the contrary of the diodes they have a driving section which makes them more sensitive to issues related to the interaction between power to handle and input signal. Aim of the article is to illustrate the limitation that is related to a 3 pin device and depict the advantage of using a fourth driving source pin also known as Kelvin source besides the traditional power source. In a 3 pin device during every switching cycle, the stray inductance of the source wire bonding coupled together with the slope of the current being interrupted is generating a voltage signal always opposed to the driving signal Vgs. The effect of such opposing signal is to slow down the switching cycle and in turn to increase the cycle by cycle switching losses. The effect of such fourth driving source pin solution is the reduction of the overall power losses in the transistor which turns into a lower operation temperature.
  • Keywords
    insulated gate bipolar transistors; power MOSFET; power bipolar transistors; switching circuits; BJT; IGBT; Kelvin source; added driver source; current slope; cycle switching losses; discrete power MOSFET; fourth driving source pin; power source; semiconductor devices; source wire bonding; stray inductance; switching cycle; three pin devices; transistors; voltage signal generation; Bonding; Inductance; MOSFET; Resistors; Sensors; Switches; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • Type

    conf

  • DOI
    10.1109/APEC.2014.6803666
  • Filename
    6803666