ZnSe-based Schottky barrier photodetectors

Author

Vigue, F. ; Tournié, E. ; Faurie, J.P.

Author_Institution

Centre de Recherche sur l´´Hetero-Epitaxie et ses Applications, CNRS, Valbonne, France

Volume

36

Issue

4

fYear

2000

fDate

2/17/2000 12:00:00 AM

Firstpage

352

Lastpage

354

Abstract

Vertical geometry photodetectors based on n^-/n⁺-ZnSe structures grown on semi-insulating GaAs (001) substrates by molecular beam epitaxy have been realised. A semi-transparent bilayer (Ni(50 Å)-Au (50 Å)) was used to form the Schottky contact. The current-voltage characteristics show that the devices have an ideality factor of 1.1, a barrier height of 1.17 eV and a low dark current density of ~10^-8 A/cm² at -4 V bias. These photodetectors have a flat responsivity above the bandgap (measured to be 0.1 A/W) and a sharp cutoff at the band edge (460 nm) of 3-4 orders of magnitude

Keywords

II-VI semiconductors; Schottky diodes; dark conductivity; gallium arsenide; gold; molecular beam epitaxial growth; nickel; photodetectors; photodiodes; semiconductor epitaxial layers; semiconductor growth; -4 V; 1.17 eV; 460 nm; 50 angstrom; GaAs; II-VI semiconductors; Ni-Au-ZnSe-GaAs; Schottky barrier photodetectors; Schottky contact; band edge; barrier height; current-voltage characteristics; cutoff; dark current density; flat responsivity; ideality factor; molecular beam epitaxy; semi-transparent bilayer; vertical geometry photodetectors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000282

Filename

840256