• DocumentCode
    1330022
  • Title

    Ultrathin polyoxide grown by electron cyclotron resonance N2 O plasma

  • Author

    Han, Sangyeon ; Lee, Jongho ; Shin, Hyungcheol

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
  • Volume
    36
  • Issue
    4
  • fYear
    2000
  • fDate
    2/17/2000 12:00:00 AM
  • Firstpage
    361
  • Lastpage
    362
  • Abstract
    A process has been developed for growing ultrathin oxide on a poly-silicon layer at low temperature by using electron cyclotron resonance (ECR) N2O plasma. Sub-4 nm thick polyoxides on n + and p+ polysilicon layers were grown and characterised. The oxides have large breakdown voltage and small charge trapping. QBD values of up to 7 C/cm2 for polyoxide on p+ polysilicon and up to 5 C/cm2 for polyoxide on n+ polysilicon were obtained
  • Keywords
    MOS capacitors; electron traps; elemental semiconductors; insulating thin films; plasma CVD; semiconductor device breakdown; silicon; LPCVD; MOS capacitors; N2O; Si-SiO2; breakdown voltage; charge trapping; electron cyclotron resonance plasma; ultrathin polyoxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000307
  • Filename
    840262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1330022