Title :
Very low saturation intensity and ultrafast response of 1.5 μm intersubband absorption in n-doped InGaAs/AlAsSb MQW
Author :
Akiyama, T. ; Neogi, A. ; Yoshida, H. ; Wada, O.
Author_Institution :
FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba, Japan
fDate :
2/17/2000 12:00:00 AM
Abstract :
It is theoretically shown that an extremely low saturation intensity (<0.05 mW/μm2) as well as an ultrafast (~1.3 ps) response are possible in 1.5 μm intersubband absorption in n-doped InGaAs/AlAsSb multiple quantum wells with electron concentration of ~1×1019 cm-3. Such a low saturation intensity is ascribed to the δ-function-like absorption spectra of the intersubband transition and a reduced dephasing rate achieved by high doping
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; electron density; gallium arsenide; indium compounds; optical communication equipment; quantum well devices; semiconductor quantum wells; δ-function-like absorption spectra; 1.3 ps; 1.5 micrometre; III-V semiconductors; InGaAs-AlAsSb; MQW; dephasing rate; electron concentration; high doping intensity; intersubband absorption; saturation intensity; ultrafast response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000306
