Title :
DABISR: A Defect-Aware Built-In Self-Repair Scheme for Single/Multi-Port RAMs in SoCs
Author :
Tseng, Tsu-Wei ; Huang, Yu-Jen ; Li, Jin-Fu
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
Built-in self-repair (BISR) techniques are widely used to enhance the yield of embedded random access memories (RAMs). Fault-location ability of test algorithms executed by a BISR circuit has heavy impact on the repair efficiency of the BISR circuit. This paper proposes a defect-aware BISR (DABISR) scheme for single-port RAMs (SPRAMs) and multi-port RAMs (MPRAMs) in system chips. Multiple RAMs can share a DABISR such that the area cost of DABISR is drastically reduced. We also present two defect-location algorithms (DLAs) for identification of bridge defects between word-lines and bit-lines of MPRAMs. The DABISR can perform DLAs to locate bridge defects such that it can provide high repair efficiency. For example, simulation results show that if a faulty two-port RAM has 20% inter-port faults, the DLAs can help to gain 8.4-14.4% increase of repair rate for different redundancy configurations. In comparison with an existing shared BISR scheme, however, the DABISR only incurs about 0.34% additional area overhead to support the function of DLAs.
Keywords :
built-in self test; fault location; random-access storage; system-on-chip; SoC; bit-lines; bridge defect identification; defect-aware built-in self-repair scheme; embedded random access memories; fault-location ability; multiport RAM; repair efficiency; singleport RAM; system chips; test algorithms; word-lines; Algorithm design and analysis; Bridges; Circuit faults; Maintenance engineering; Random access memory; Redundancy; System-on-a-chip; Built-in self-repair; built-in self-test; defect location; multi-port RAM; random access memory (RAM);
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2010.2061570