Low-voltage electronics for the stimulation of biological neural networks using fully complementary BiCMOS circuits

Author

Kim, Changhyun ; Wise, Kensall D.

Author_Institution

Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA

Volume

32

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1483

Lastpage

1490

Abstract

This paper describes low-voltage neural stimulating circuitry developed using fully complementary BiCMOS (FC-BiCMOS) process technology for providing charge-balanced bipolar stimulating currents to tissue in the central nervous system. The electronics features an FC-BiCMOS buffer, a 7-b biphasic current-output digital-to-analog converter, a 14-b frequency divider, a nonoverlapping two-phase clock generator, and an auto timeout safety scheme while driving any two of eight selected sites from 0 to ±126 μA with ±2 μA resolution. The circuit area is 1.6 mm² in 3-μm features. Micropower circuit techniques allow the probe to dissipate <10 μW in standby and operate at 10 MHz from ±2.5 V supplies

Keywords

BiCMOS integrated circuits; bioelectric phenomena; biomedical electronics; neural nets; 10 MHz; 10 muW; 2.5 V; biological neural network; central nervous system; charge-balanced bipolar stimulating current; fully complementary BiCMOS circuit; low-voltage electronics; micropower circuit; stimulation; tissue; BiCMOS integrated circuits; Biological neural networks; Biological tissues; Cables; Central nervous system; Electrodes; Power dissipation; Probes; Prosthetics; Silicon;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.634656

Filename

634656