DocumentCode :
1330504
Title :
Magnetic Properties of Zn
O Thin Films Grown by RF Magnetron Co-Sputtering in Ar and N
. X-ray diffraction analysis indicated that all the samples had <i>c</i>-axis preferred orientation, without any segregated secondary phase. UV-visible spectroscopy and X-ray photoelectron spectroscopy showed that Co<sup>2+</sup> ions substituted tetrahedrally coordinated Zn<sup>2+</sup> ions site for the films. The electrical and magnetic properties were investigated by the Hall effect and superconducting quantum interference device (SQUID) measurements, respectively. The Zn<sub>1-x</sub>Co<sub>x</sub>O had <i>n</i>-type conduction with electron concentration of 10<sup>19</sup> cm<sup>-3</sup>, and exhibited paramagnetism. Due to the charge compensation by N doping, the Zn<sub>1-x</sub>Co<sub>x</sub>N<sub>y</sub>O<sub>1-y</sub> possessed large resistivity, and also presented paramagnetism, besides the film Zn<sub>1- x</sub>Co<sub>x</sub>N<sub>y</sub>O<sub>1-y</sub> (x = 0.0162, y = 0.0004) , which possessed room temperature ferromagnetism (RTFM).</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Hall effect; II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; electrical resistivity; ferromagnetic materials; magnetic thin films; paramagnetic materials; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; Hall effect; N doping; RF magnetron cosputtering; SQUID measurements; UV-visible spectroscopy; X-ray diffraction analysis; X-ray photoelectron spectroscopy; XPS; XRD; Zn<sub>1-x</sub>Co<sub>x</sub>N<sub>y</sub>O<sub>1-y</sub>; Zn<sub>1-x</sub>Co<sub>x</sub>O; c-axis preferred orientation; charge compensation; cobalt ions; electrical properties; electron concentration; ferromagnetism; magnetic properties; n-type conduction; paramagnetism; resistivity; segregated secondary phase; sputtering gases; superconducting quantum interference device; temperature 293 K to 298 K; tetrahedrally coordinated zinc ion site; thin films; Atomic measurements; Ions; Magnetic hysteresis; Magnetic properties; Temperature measurement; Zinc oxide; Diluted magnetic semiconductor; ZnCoO; magnetron sputtering; nitrogen doping;</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Magnetics, IEEE Transactions on</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9464</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TMAG.2011.2146243</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6027793</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1330504' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1330504</a></div>
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