35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-μm AlGaAs/GaAs-HEMTs

Author

Lao, Zhihao ; Bronner, Wolfgang ; Thiede, Andreas ; Schlechtweg, Michael ; Hulsmann, Axel ; Rieger-Motzer, Michaela ; Kaufel, Gudrun ; Raynor, Brian ; Sedler, Martin

Author_Institution

Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany

Volume

32

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1556

Lastpage

1562

Abstract

Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-μm gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (f_T=60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 V

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; frequency dividers; gallium arsenide; -2.5 V; 0.2 micron; 250 mW; 35 GHz; 350 mW; 4 V; 48 GHz; AlGaAs-GaAs; AlGaAs/GaAs HEMT IC; divide-by-four divider; divide-by-two divider; dynamic frequency divider; high-speed operation; power consumption; static frequency divider; Circuits; Flip-flops; Frequency conversion; HEMTs; Heterojunction bipolar transistors; MODFETs; Master-slave; Resistors; Switches; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.634664

Filename

634664