Title :
35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-μm AlGaAs/GaAs-HEMTs
Author :
Lao, Zhihao ; Bronner, Wolfgang ; Thiede, Andreas ; Schlechtweg, Michael ; Hulsmann, Axel ; Rieger-Motzer, Michaela ; Kaufel, Gudrun ; Raynor, Brian ; Sedler, Martin
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany
fDate :
10/1/1997 12:00:00 AM
Abstract :
Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-μm gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (fT=60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 V
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; frequency dividers; gallium arsenide; -2.5 V; 0.2 micron; 250 mW; 35 GHz; 350 mW; 4 V; 48 GHz; AlGaAs-GaAs; AlGaAs/GaAs HEMT IC; divide-by-four divider; divide-by-two divider; dynamic frequency divider; high-speed operation; power consumption; static frequency divider; Circuits; Flip-flops; Frequency conversion; HEMTs; Heterojunction bipolar transistors; MODFETs; Master-slave; Resistors; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
