DocumentCode :
1330545
Title :
A 100-MHz 4-mW four-quadrant BiCMOS analog multiplier
Author :
Franciotta, M. ; Colli, G. ; Castello, R.
Author_Institution :
CSEM, Neuchatel, Switzerland
Volume :
32
Issue :
10
fYear :
1997
fDate :
10/1/1997 12:00:00 AM
Firstpage :
1568
Lastpage :
1572
Abstract :
A four-quadrant analog multiplier based on a simple, very linear, and fast BiCMOS transconductor using MOS transistors operating in the triode region and NPN bipolar devices is presented. The four quadrant operation is obtained by crosscoupling-in a Gilbert-cell fashion-two transconductors with a third stage used to modulate the transconductances of the former two. A chip prototype of the multiplier has been integrated in a 1.2-μm BiCMOS process to validate the idea. It has been designed to achieve high linearity on both inputs: measured results show a total harmonic distortion (THD) of less than -40 dB with a 3-V peak-to-peak input signal at 5 MHz from a 5-V supply and an output -3 dB bandwidth of 100 MHz while dissipating 4 mW from a 3-V supply. The integrated chip prototype active area is 1 mm2
Keywords :
BiCMOS analogue integrated circuits; analogue multipliers; harmonic distortion; integrated circuit testing; 1.2 micron; 100 MHz; 3 V; 3 dB bandwidth; 4 mW; 5 MHz; BiCMOS; Gilbert-cell fashion; MOS transistors; NPN bipolar devices; crosscoupling; four-quadrant analog multiplier; linearity; peak-to-peak input signal; prototype active area; total harmonic distortion; transconductor; triode region; Bandwidth; BiCMOS integrated circuits; Distortion measurement; Linearity; MOSFETs; Prototypes; Semiconductor device measurement; Signal design; Total harmonic distortion; Transconductors;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.634666
Filename :
634666
Link To Document :
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