• DocumentCode
    1330755
  • Title

    Ferromagnetism and Bound Magnetic Polaron Behavior in {(\\hbox {In}_{1-{\\rm x}}\\hbox {Co}_{\\rm x})}_{2}\\hbox {O}_{3}

  • Author

    Bora, T. ; Samantaray, B. ; Mohanty, S. ; Ravi, Siddarth

  • Author_Institution
    Dept. of Phys., Indian Inst. of Technol. Guwahati, Guwahati, India
  • Volume
    47
  • Issue
    10
  • fYear
    2011
  • Firstpage
    3991
  • Lastpage
    3994
  • Abstract
    Bulk samples of (In1-xCox)2O3 were prepared in single phase form for x=0.02 and 0.07 . The samples are found to be free from impurities such as Co3O4 and other cobalt oxides as per the detailed micro structural and Raman spectroscopic analysis. Temperature variation of magnetization upto 900 K for 0.3 T magnetic field and field variation of magnetization at different temperatures down to 20 K were measured. Both the samples are found to exhibit clear room temperature ferromagnetism. The increase in spontaneous magnetization, remanent magnetization and coercive field with decrease in temperature is explained in terms of magnetic anisotropy. The initial magnetization data could be fitted to the bound magnetic polaron model. A clear paramagnetic to ferromagnetic transition with TC ≈ 718 K was observed. The Curie-Weiss law fit conform the ferromagnetic transition with effective magnetic moment value of 1.5 μB.
  • Keywords
    Raman spectra; coercive force; ferromagnetic-paramagnetic transitions; ferromagnetism; impurities; indium compounds; magnetic anisotropy; magnetic moments; magnetic polarons; magnetic susceptibility; paramagnetism; remanence; semimagnetic semiconductors; (In1-xCox)2O3; Co3O4 impurities; Curie-Weiss law; Raman spectroscopic analysis; bound magnetic polaron behavior; cobalt oxides; coercive field; ferromagnetism; magnetic anisotropy; magnetic flux density 0.3 T; magnetic moment; microstructural analysis; paramagnetic-ferromagnetic transition; remanent magnetization; single phase form; spontaneous magnetization; temperature 293 K to 298 K; temperature 718 K; temperature 900 K to 20 K; Magnetic hysteresis; Magnetic semiconductors; Magnetization; Perpendicular magnetic anisotropy; Saturation magnetization; Temperature measurement; Indium compounds; magnetic semiconductors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2011.2157660
  • Filename
    6027828