Title :
A harmonic colliding-pulse mode-locked semiconductor laser for stable subterahertz pulse generation
Author :
Katagiri, Yoshitada ; Takada, Atsushi
Author_Institution :
NTT Opto-Electron. Labs., Tokyo, Japan
Abstract :
A 192-GHz, sixth-harmonic colliding-pulse mode-locked InGaAsP-InP strained QW semiconductor laser that has a monolithic periodic saturable-absorber configuration is presented. The generation of nearly transform-limited, 0.75-ps pulses with a side-mode suppression ratio of about 27 dB at the central mode is demonstrated. The temporal repetition rate of the pulses was measured for the first time with the accuracy of the synthesizer by photonic downconversion using optical modulation sidebands. The rate for the pulses under a higher saturable-absorber voltage of -2.33 V had a 10-dB reduction RF-spectrum width of 1.1 MHz with a resolution of 300 kHz. The repetition rate versus reverse voltage was linear in a range from -750 to -900 mV.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser mode locking; laser modes; laser stability; optical frequency conversion; optical modulation; optical saturable absorption; quantum well lasers; 0.75 ps; 192 GHz; 2.44 V; 750 to 900 mV; InGaAsP-InP; InGaAsP-InP strained QW semiconductor laser; RF-spectrum width; central mode; harmonic colliding-pulse mode-locked semiconductor laser; higher saturable-absorber voltage; monolithic periodic saturable-absorber configuration; nearly transform-limited; optical modulation sidebands; photonic downconversion; ps pulses; repetition rate; resolution; reverse voltage; side-mode suppression ratio; stable subterahertz pulse generation; temporal repetition rate; Laser mode locking; Laser stability; Optical pulse generation; Optical pulses; Pulse generation; Pulse measurements; Pulse modulation; Semiconductor lasers; Time measurement; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE