Title :
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE
Author :
Lammert, R.M. ; Jones, A.M. ; Youtsey, C.T. ; Hughes, J.S. ; Roh, S.D. ; Adesida, I. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40 dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 /spl Aring/.
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser modes; optical fabrication; quantum well lasers; red shift; ridge waveguides; semiconductor growth; spontaneous emission; sputter etching; waveguide lasers; 0.5 mum; 0.6 mum; 32 mA; 43 mA; Bragg condition wavelengths; CAIBE; InGaAsP-InP; InGaAsP-InP ridge-waveguide DBR lasers; first-order surface gratings; grating etch depths; multiple quantum-well lasers; peak spontaneous emission wavelength; pulsed threshold currents; red-shifted; side-mode suppression; single growth step; single longitudinal mode; slope efficiencies; uncoated devices; Bragg gratings; Corrugated surfaces; Distributed Bragg reflectors; Distributed feedback devices; Etching; Indium phosphide; Laser feedback; Laser modes; Surface emitting lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
