Title :
A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
Author :
Miyamoto, T. ; Takeuchi, K. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate layers between well and barrier, which is effective for elongating the emission wavelength and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs layers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; GaInNAs-GaAs; GaInNAs-GaAs QW; GaInNAs-GaAs lasers; GaInNAs-GaAs quantum-well structure; emission wavelength; lattice-matched GaInNAs intermediate layers; long-wavelength semiconductor lasers; rectangular GaInNAs QWs; reducing well thickness; strained GaInNAs layers; well thickness; Conducting materials; Gallium arsenide; Gas lasers; Optical materials; Photonic band gap; Pump lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
