DocumentCode :
1330811
Title :
Electrical Transport Properties and Spin Injection in 
Junctions
Author :
Saito, Takashi ; Tezuka, Nobuki ; Sugimoto, Satoshi
Author_Institution :
Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan
Volume :
47
Issue :
10
fYear :
2011
Firstpage :
2447
Lastpage :
2450
Abstract :
We investigated the electrical transport properties in Co2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a Schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2×10-9 Ω·m2 which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L21 ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.
Keywords :
Hanle effect; III-V semiconductors; Schottky barriers; aluminium alloys; cobalt alloys; current density; electrical conductivity; ferromagnetic materials; gallium arsenide; iron alloys; magnetic epitaxial layers; magnetic relaxation; magnetoresistance; semiconductor epitaxial layers; semiconductor-metal boundaries; silicon alloys; spin polarised transport; Co2FeAl0.5Si0.5-GaAs; Hanle measurement; Schottky tunnel barrier; bias dependent conductance; current density-voltage characteristics; electrical transport properties; junction resistance; spin injection efficiency; spin relaxation time; temperature 5 K; Electrodes; Gallium arsenide; Junctions; Magnetic tunneling; Schottky barriers; Spin polarized transport; Temperature measurement; ${rm Co}_{2}{rm FeAl}_{0.5}{rm Si}_{0.5}$ ; full-Heusler alloy; spin injection; spintronics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2011.2153189
Filename :
6027836
Link To Document :
