Title :
High-power InAlGaAs-GaAs laser diode emitting near 731 nm
Author :
Emanuel, M.A. ; Skidmore, J.A. ; Jansen, M. ; Nabiev, R.
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
Abstract :
High-power, reliable operation of an InAlGaAs-based QW laser diode structure emitting near 731 nm and having a strained InAlGaAs active region is described. Threshold currents for coated 100 μm×1000 μm devices are 281 mA, and a peak power conversion efficiency of 41% is measured. Internal losses are measured to be 1.2 cm/sup -1/. A system for fiber-coupling two-dimensional continuous-wave (CW) arrays of these devices is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser reliability; laser transitions; optical fibre couplers; optical losses; quantum well lasers; semiconductor laser arrays; 100 mum; 1000 mum; 281 mA; 41 percent; 731 nm; CW lasers; InAlGaAs-GaAs; InAlGaAs-based QW laser diode structure; fiber-coupling two-dimensional continuous-wave laser arrays; high-power InAlGaAs-GaAs laser diode; internal losses; peak power conversion efficiency; reliable operation; strained InAlGaAs active region; threshold currents; Aluminum; Biomedical measurements; Diode lasers; Fiber lasers; Gallium; Indium; Laser applications; Semiconductor diodes; Semiconductor laser arrays; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
